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Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.425)
I Features
0.3+0.1 -0.0 3
0.15+0.10 -0.05
G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.250.10
2.10.1 5
1
2
(0.65) (0.65) 1.30.1
I Absolute Maximum Ratings (Ta = 25C)
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 -30 20 10 150 125 -55 to +125 Unit V V mA mA mW C C
2.00.2 10
1: Source 2: Drain 3: Gate
0 to 0.1
0.90.1
0.9+0.2 -0.1
EIAJ: SC-70 SMini3-G1 Package
Marking Symbol (Example): 1O
I Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGSC gm Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, ID = 0.5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 30V, ID = 1mA, GV = 80dB Rg = 100k, Function = FLAT - 0.1 4 4 14 3.5 60 min 0.5 typ max 12 -100 -1.5 Unit mA nA V mS pF pF m V
Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NV
*
IDSS rank classification Runk IDSS (mA) P 0.5 to 3 1OP Q 2 to 6 1OQ R 4 to 12 1OR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
0.20.1
251
Silicon Junction FETs (Small Signal)
P D Ta
240 8 Ta=25C 7 200 8.0
2SK0662
I D V DS
9.6 VDS=10V
I D V GS
Allowable power dissipation PD (mW)
Drain current ID (mA)
160
VGS=0V 5 4 - 0.1V 3 2 1 - 0.2V - 0.3V - 0.4V
Drain current ID (mA)
6
6.4
120
4.8
80
3.2 Ta=75C 1.6 25C -25C
40
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 -1.0
- 0.8
- 0.6
- 0.4
- 0.2
0
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
g m VGS
20 VDS=10V Ta=25C 20
gm ID
10
C iss, C oss V D S
Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF)
VDS=10V Ta=25C VGS=-3V f=1MHz Ta=25C 8
Mutual conductance gm (mS)
16
Mutual conductance gm (mS)
IDSS=5mA 16
12
12 2mA 8
6
Ciss
8 IDSS=5mA
4
4 2mA 0 - 0.8
4
2
Coss
0 - 0.6 - 0.4 - 0.2 0 0 1 2 3 4 5 6 7 8
0 1 3 10 30 100
Gate to source voltage VGS (V)
Drain current ID (mA)
Drain to source voltage VDS (V)
C rss V DS
Reverse transfer capacitance (Common source) Crss (pF)
5 VGS=3V f=1MHz Ta=25C 4 12
NF f
VDS=10V ID=5.2mA Ta=25C
10
Noise figure NF (dB)
8
3
6 Rg=500
2
4
1
2 1k
0 1 3 10 30 100
0 10
102
103
104
105
Drain to source voltage VDS
(V)
Frequency f (Hz)
252
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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